msf 4 n 6 0 l 6 00v n - channel mos fet publication order number: [ MSF4N60L ] ? bruckewell technology corporation rev. a - 2014 description the msf4n60 l is a n - channel enhancement - mode mosfet , providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost effectiveness. the to - 220f package is universally preferred for all c ommercial - industrial applications features ? low on resistance ? simple drive requirement ? low gate charge ? fast switching characteristic ? rohs compliant package a pplication (500v - 600v) ? open framed power supply ? adapter ? stb packing & order informa tion 50/tube ; 1,000/box graphic symbol maximum ratings and electrical characteristics absolute maximum ratings symbol parameter value unit v dss drain - source voltage 600 v v gs gate - source voltage 30 v i d drain current - continuous (tc=2 5 c ) 4.5 a drain current - continuous (tc= 100 c ) 2.6 a i dm drain current pulsed 18 a i ar avalanche current 4.0 a e as s ingle pulsed avalanche energy 48 mj e ar repetitive avalanche energy 3.1 mj dv/dt peak diode recovery dv/dt 4.5 v/ns
msf 4 n 6 0 l 6 00v n - channel mos fet publication order number: [ MSF4N60L ] ? bruckewell technology corporation rev. a - 2014 absolute max imum ratings symbol parameter value unit t l maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds 300 c tpkg maximum temperature for soldering @ package body for 10 seconds 260 c p d total power dissipation ( tc = 25 c) derat ing factor above 25 c 31 w 0.25 w/ c t stg operating and storage temperature range - 55 to +150 c t j storage temperature 150 c notes; 1. repetitive rating: pulse width limited by maximum junction temperature 2. i as = 4 a, v dd =5 0v, l=7mh, v g = 10v , starti ng t j =25 3. i sd Q 4a , di/dt Q 2 00a/ s,v dd Q bv dss , starting t j =25 thermal c haracteristics (tc=25c unless otherwise noted) symbol parameter max. unit s r jc thermal resistance, junction - to - case 2.6 c /w r ja thermal resistance, junction - to - ambient 62.5 s tatic characteristics symbol parameter test conditions min typ. max. unit s b v dss drain - source breakdown voltage v gs = 0 v , i d = 250a dss / j breakdown voltage temperature coefficient i d = 250a, referenced to 25 gs (t h) gate threshold voltage v ds = v gs ,i d = 250a dss zero gate voltage drain current v ds = 60 0 v , v gs = 0 v v ds = 48 0 v , t c = 125 c -- -- 1 10 a gss gate - body leakage forward v gs = ds(on) static drain - source on - resista nce v gs = 10 v,i d = 3.5 a -- 0.9 1.4 dynamic characteristics symbol parameter test conditions min typ. max. unit s c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0mhz -- 1482 -- pf c oss output capacitance -- 121.7 -- pf c rss reverse transfer c apacitance -- 14 -- pf
msf 4 n 6 0 l 6 00v n - channel mos fet publication order number: [ MSF4N60L ] ? bruckewell technology corporation rev. a - 2014 dynamic characteristics symbol parameter test conditions min typ. max. unit s t d(on) turn - on time v ds = 30 0 v, i d = 7 a, r g = 25 g s = 1 0 v -- 10 30 ns t r turn - on time -- 40 80 ns t d(off) turn - off delay time -- 40 100 n s tf turn - off fall time -- 50 90 ns q g total gate charge v ds = 30 0 v,i d = 7 a , v gs = 10 v -- 28 37 nc q gs gate - source charge -- 4.7 -- nc q g d gate - drain charge -- 11 -- nc source - drain diode symbol parameter test conditions min typ. max. unit s i s v d = v g = 0 v s = 1.3 v -- -- 4.0 a i sm -- -- 16 v sd i s = 4 a , v gs = 0 v -- 0.85 1.0 v t rr i f = 7 a , v gs = 0 v dif/dt=100a/s rr -- 3.3 -- notes; 1 . pulse test: pulse width Q 300 s, duty cycle Q 2%
msf 4 n 6 0 l 6 00v n - channel mos fet publication order number: [ MSF4N60L ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig.1 - on region characteristics fig. 2 - transfer characteristics fig.3 - on resistance variation vs drain current a nd gate voltage fig.4 - body diode forward voltage variation with source current and temperature fig.5 - capacitance characteristics fig.6 - gate charge characteristics
msf 4 n 6 0 l 6 00v n - channel mos fet publication order number: [ MSF4N60L ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig. 7 - breakdown voltage variation vs temperature fig. 8 - o n - resistance variation vs temperature fig. 9 - maximum safe operating area fig. 10 - maximum drain current vs case temperature fig.11 - transient thermal response curve
msf 4 n 6 0 l 6 00v n - channel mos fet publication order number: [ MSF4N60L ] ? bruckewell technology corporation rev. a - 2014 characteristics test circuit & waveform fig 12. resistive switching test circui t & waveforms fig 13. gate charge test circuit & waveform fig 14. unclamped inductive switching test circuit & waveforms
msf 4 n 6 0 l 6 00v n - channel mos fet publication order number: [ MSF4N60L ] ? bruckewell technology corporation rev. a - 2014 fig 15. peak diode recovery dv/dt test circuit & waveforms
msf 4 n 6 0 l 6 00v n - channel mos fet publication order number: [ MSF4N60L ] ? bruckewell technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and a ll liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particula r purpose or the continuing production of any product. to the maximum extent permitted by applicable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without li mitation special, consequential or incidental damages. (iii) any and all implied warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells knowledge of typical requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it i s the customers responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. product specifications do not expand or otherwise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.
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